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Highly sensitive determination of N+ doping level in 3C–SiC and GaN epilayers by Fourier transform infrared spectroscopy

✍ Scribed by M. Portail; M. Zielinski; T. Chassagne; H. Chauveau; S. Roy; P. De Mierry


Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
765 KB
Volume
165
Category
Article
ISSN
0921-5107

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