The Au/Ti/p-diamond contacts were prepared by r.f. sputtering and I-V measurements showed that the as-deposited contacts were ohmic. Upon annealing at 500 Β°C for 10 min in a vacuum of 10 -4 Pa, the ohmic characteristics of the contacts were improved by 30%. The specific contact resistivity, which wa
β¦ LIBER β¦
Au/p-diamond ohmic contacts deposited by RF sputtering
β Scribed by C.M. Zhen; X.Q. Wang; X.C. Wu; C.X. Liu; D.L. Hou
- Book ID
- 103819621
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 641 KB
- Volume
- 255
- Category
- Article
- ISSN
- 0169-4332
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