RF-sputtered CrB2 diffusion barrier for Ni/Au Ohmic contacts on p-CuCrO2

✍ Scribed by W.T. Lim; P.W. Sadik; D.P. Norton; B.P. Gila; S.J. Pearton; I.I. Kravchenko; F. Ren

• Book ID: 104002336
• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 685 KB
• Volume: 254
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2008.02.028

✦ Synopsis

Ohmic contacts to p-type CuCrO 2 using Ni/Au/CrB 2 /Ti/Au contact metallurgy are reported. The samples were annealed in the 200-700 8C range for 60 s in flowing oxygen ambient. A minimum specific contact resistance of $2 Â 10 À5 V cm 2 was obtained after annealing at 400 8C. Further increase in the annealing temperature (>400 8C) resulted in the degradation of contact resistance. Auger Electron Spectroscopy (AES) depth profiling showed that out-diffusion of Ti to the surface of the contact stacks was evident by 400 8C, followed by Cr at higher temperature. The CrB 2 diffusion barrier decreases the specific contact resistance by almost two orders of magnitude relative to Ni/Au alone.