Ohmic contacts and interface properties of Au/Ti/p-diamond prepared by r.f. sputtering

✍ Scribed by Yinyue Wang; Xueqin Liu; Congmian Zhen; Hengxiang Gong; Zhijun Yan; Yinghu Yang; Shuyi Ma

• Book ID: 101321169
• Publisher: John Wiley and Sons
• Year: 2000
• Tongue: English
• Weight: 91 KB
• Volume: 29
• Category: Article
• ISSN: 0142-2421
• DOI: 10.1002/1096-9918(200007)29:7<478::aid-sia887>3.0.co;2-a

✦ Synopsis

The Au/Ti/p-diamond contacts were prepared by r.f. sputtering and I-V measurements showed that the as-deposited contacts were ohmic. Upon annealing at 500 °C for 10 min in a vacuum of 10 -4 Pa, the ohmic characteristics of the contacts were improved by 30%. The specific contact resistivity, which was calculated by the transmission line model (TLM), decreased from 2.9 × 10 -3 to 2.0 × 10 -3 Z•cm 2 as a result of post-deposition annealing. Analysis by XPS indicated the formation of titanium carbide at the Ti/diamond interface in the as-deposited and annealed states. This gave the contacts their good ohmic characteristics.