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Atomistic Modeling of Gate-All-Around Si-Nanowire Field-Effect Transistors

✍ Scribed by Pecchia, A.; Salamandra, L.; Latessa, L.; Aradi, B.; Frauenheim, T.; Di Carlo, A.

Book ID: 114618997
Publisher: IEEE
Year: 2007
Tongue: English
Weight: 393 KB
Volume: 54
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2007.908883

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