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Temperature Dependent Study of Random Telegraph Noise in Gate-All-Around PMOS Silicon Nanowire Field-Effect Transistors

✍ Scribed by Hong, B. H.; Choi, L.; Jung, Y. C.; Hwang, S. W.; Cho, K. H.; Yeo, K. H.; Kim, D.-W.; Jin, G. Y.; Park, D.; Song, S. H.; Lee, Y. Y.; Son, M. H.; Ahn, D.

Book ID: 120605612
Publisher: IEEE
Year: 2010
Tongue: English
Weight: 683 KB
Volume: 9
Category: Article
ISSN: 1536-125X
DOI: 10.1109/TNANO.2010.2045006

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