Electrical characterization of Si nanowire field-effect transistors with semi gate-around structure suitable for integration

✍ Scribed by Soshi Sato; Hideyuki Kamimura; Hideaki Arai; Kuniyuki Kakushima; Parhat Ahmet; Kenji Ohmori; Keisaku Yamada; Hiroshi Iwai

• Book ID: 108271800
• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 647 KB
• Volume: 54
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/j.sse.2010.04.022