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Atomic scale simulation of silicon anisotropic chemical etching

✍ Scribed by H. Camon; M. Djafari-Rouhani; D. Estève; A. M. Gué; Z. Moktadir


Publisher
Springer-Verlag
Year
1995
Tongue
English
Weight
514 KB
Volume
1
Category
Article
ISSN
0946-7076

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New trends in atomic scale simulation of
✍ H. Camon; Z. Moktadir; M. Djafari-Rouhani 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 384 KB

A new atomic scale model has been developed to simulate anisotropic etching of silicon in KOH solutions. This model is based on the influence of the number of hydroxide groups attached to atoms. Etch rates and macroscopic activation energies have been calculated and compared with experimental data.