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Atomic microstructure and electronic properties of a-SiNx:H deposited by PECVD

โœ Scribed by Keiji Maeda; Ikurou Umezu

Book ID
117147136
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
246 KB
Volume
137-138
Category
Article
ISSN
0022-3093

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โœ T Takagi; K Takechi; Y Nakagawa; Y Watabe; S Nishida ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 322 KB

Very High Frequency (VHF) plasma enhanced chemical vapour deposition (PECVD) has been applied to hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous silicon nitride (a-SiN x :H) films for thin film transistors (TFTs) fabrication. The effect of the excitation frequency on the depositio