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Atomic layer deposition of ZrO2 thin films using a new alkoxide precursor

✍ Scribed by R. Matero; M. Ritala; M. Leskelä; A.C. Jones; P.A. Williams; J.F. Bickley; A. Steiner; T.J. Leedham; H.O. Davies

Book ID
117145722
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
192 KB
Volume
303
Category
Article
ISSN
0022-3093

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Atomic Layer Deposition of Ruthenium Thi
Atomic Layer Deposition of Ruthenium Thin Films from an Amidinate Precursor
✍ Hongtao Wang; Roy G. Gordon; Roger Alvis; Robert M. Ulfig 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 846 KB

## Abstract Ruthenium thin films are deposited by atomic layer deposition (ALD) from bis(__N__,__N__'‐di‐__tert__‐butylacetamidinato)ruthenium(II) dicarbonyl and O~2~. Highly conductive, dense, and pure thin films can be deposited when oxygen exposure, __E__~O~, approaches a certain threshold (__E_