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Atomic Layer Deposition of $\hbox{SiO}_{2}$ for AlGaN/GaN MOS-HFETs

✍ Scribed by Kirkpatrick, Casey J.; Lee, Bongmook; Suri, Rahul; Yang, Xiangyu; Misra, Veena

Book ID: 118041939
Publisher: IEEE
Year: 2012
Tongue: English
Weight: 345 KB
Volume: 33
Category: Article
ISSN: 0741-3106
DOI: 10.1109/led.2012.2203782

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## Abstract High quality SiO~2~ layers were successfully deposited onto AlGaN by photo‐chemical vapor deposition (photo‐CVD) using D~2~ lamp as the excitation source at room temperature. The resulting interface state density was only 8.86 × 10^11^ cm^–2^ eV^–1^. With a 2 µm gate, it was found that

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