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Atomic Layer Deposition of Hafnium Dioxide Films from 1-Methoxy-2-methyl-2-propanolate Complex of Hafnium

✍ Scribed by Kukli, Kaupo; Ritala, Mikko; Leskelä, Markku; Sajavaara, Timo; Keinonen, Juhani; Jones, Anthony C.; Roberts, John L.


Book ID
125850172
Publisher
American Chemical Society
Year
2003
Tongue
English
Weight
129 KB
Volume
15
Category
Article
ISSN
0897-4756

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Atomic Layer Deposition of Hafnium Dioxi
✍ K. Kukli; M. Ritala; M. Leskelä; T. Sajavaara; J. Keinonen; A.C. Jones; N.L. Tob 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 272 KB 👁 1 views

## Abstract HfO~2~ films were grown by atomic layer deposition (ALD) from a new liquid precursor, Hf(ONEt~2~)~4~ and H~2~O, at temperatures between 250 °C and 350 °C on borosilicate glass and Si(100) substrates. The highest growth rate was achieved at 300 °C, whereas the growth was essentially slow