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Atomic layer deposited silicon dioxide films on nanomechanical silicon nitride resonators

✍ Scribed by Waggoner, P. S.; Tan, C. P.; Craighead, H. G.

Book ID
120310454
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
502 KB
Volume
107
Category
Article
ISSN
0021-8979

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A1203-films deposited by atomic layer epitaxy onto silicon wafers were investigated structurally and electrically. A post-deposition anneal at 900Β°C resulted in a decrease in film thickness of about 10% and an increase in the index of refraction of about 3%. The densification did not significantly i