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Atomic-layer-deposited (HfO 2 ) 1− x (Al 2 O 3 ) x nanolaminate films on InP with different Al 2 O 3 contents

✍ Scribed by An, Chee-Hong; Mahata, Chandreswar; Byun, Young-Chul; Kim, Hyoungsub


Book ID
120977584
Publisher
Institute of Physics
Year
2013
Tongue
English
Weight
1024 KB
Volume
46
Category
Article
ISSN
0022-3727

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We present a synchrotron-based XPS investigation on the interface between InAs and Al 2 O 3 or HfO 2 layers, deposited by ALD at different temperatures, for InAs substrates with different surface orientations as well as for InAs nanowires. We reveal the composition of the native Oxide and how the hi