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Asymmetry in Gate Capacitance–Voltage – Behavior of Ultrathin Metal Gate MOSFETs With Gate Dielectrics

✍ Scribed by Fei Li; Hsing-Huang Tseng; Register, L.F.; Tobin, P.J.; Banerjee, S.K.

Book ID: 114618354
Publisher: IEEE
Year: 2006
Tongue: English
Weight: 175 KB
Volume: 53
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2006.878013

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Asymmetry in Gate Capacitance&#8211;Voltage &#8211; Behavior of Ultrathin Metal Gate MOSFETs With Gate Dielectrics

Asymmetry in Gate Capacitance–Voltage – Behavior of Ultrathin Metal Gate MOSFETs With Gate Dielectrics