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Asymmetric Energy Distribution of Interface Traps in n- and p-MOSFETs With<tex>$hbox HfO _2$</tex>Gate Dielectric on Ultrathin SiON Buffer Layer

✍ Scribed by J. Han; E. Vogel; E. Gusev; C. D'emic; C. Richter; D. Heh; J. Suehle


Book ID
126697015
Publisher
IEEE
Year
2004
Tongue
English
Weight
133 KB
Volume
25
Category
Article
ISSN
0741-3106

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