✦ LIBER ✦

Assessment of pulse conditions effects on reliability in GaN-based high electron mobility transistors by transient temperature measurements

✍ Scribed by Zhang, Yamin; Feng, Shiwei; Zhu, Hui; Zhang, Guangchen; Deng, Bing; Ma, Lin

Book ID: 121187334
Publisher: American Institute of Physics
Year: 2013
Tongue: English
Weight: 973 KB
Volume: 114
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.4820763

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Effect of bias conditions on pressure se

Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor

✍ Le Boulbar, E.D.; Edwards, M.J.; Vittoz, S.; Vanko, G.; Brinkfeldt, K.; Rufer, L 📂 Article 📅 2013 🏛 Elsevier Science 🌐 English ⚖ 621 KB

Effect of temperature on CO sensing resp

Effect of temperature on CO sensing response in air ambient by using ZnO nanorod-gated AlGaN/GaN high electron mobility transistors

✍ Lo, Chien-Fong; Xi, Yuyin; Liu, Lu; Pearton, Stephen J.; Doré, Sylvain; Hsu, Chi 📂 Article 📅 2013 🏛 Elsevier Science 🌐 English ⚖ 724 KB

Effect of surface passivation by SiN/SiO

Effect of surface passivation by SiN/SiO2of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

✍ Gassoumi, Malek; Mosbahi, Hana; Zaidi, Mohamed Ali; Gaquiere, Christophe; Maaref 📂 Article 📅 2013 🏛 Springer 🌐 English ⚖ 212 KB

Effect of AlN nucleation layer growth co

Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN∕GaN high electron mobility transistors grown by molecular beam epitaxy (MBE)

✍ Poblenz, C.; Waltereit, P.; Rajan, S.; Mishra, U. K.; Speck, J. S.; Chin, P.; Sm 📂 Article 📅 2005 🏛 AVS (American Vacuum Society) 🌐 English ⚖ 326 KB

[IEEE 2010 IEEE International Reliabilit

[IEEE 2010 IEEE International Reliability Physics Symposium - Garden Grove (Anaheim), CA, USA (2010.05.2-2010.05.6)] 2010 IEEE International Reliability Physics Symposium - Effect of trapping on the critical voltage for degradation in GaN high electron mobility transistors

✍ Demirtas, Sefa; del Alamo, Jesus A. 📂 Article 📅 2010 🏛 IEEE ⚖ 397 KB