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Application of ionic microanalysis to the determination of boron depth profiles in silicon and silica

✍ Scribed by B. Blanchard; N. Hilleret; J. B. Quoirin


Book ID
112766515
Publisher
Springer
Year
1972
Tongue
English
Weight
699 KB
Volume
12
Category
Article
ISSN
1588-2780

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In this paper, an iterative algorithm is used in order to deconvolve some real and simulated SIMS proÐles of boron-doped layers in silicon. The real SIMS proÐles are obtained by the analysis of delta layers of boron-doped silicon in a silicon matrix, analysed in a Cameca IMS3/4f instrument at obliq