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Annealing effects on the p-type ZnO films fabricated on GaAs substrate by atmospheric pressure metal organic chemical vapor deposition

✍ Scribed by Yen-Chin Huang; Li-Wei Weng; Wu-Yih Uen; Shan-Ming Lan; Zhen-Yu Li; Sen-Mao Liao; Tai-Yuan Lin; Tsun-Neng Yang


Book ID
116607718
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
420 KB
Volume
509
Category
Article
ISSN
0925-8388

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πŸ“œ SIMILAR VOLUMES


Annealing effects on electrical and opti
✍ Jingchang Sun; Hongwei Liang; Jianze Zhao; Qiuju Feng; Jiming Bian; Ziwen Zhao; πŸ“‚ Article πŸ“… 2008 πŸ› Elsevier Science 🌐 English βš– 575 KB

## 2. Experimental procedures ZnO film was deposited on the SI-GaAs (100) substrate by MOCVD. Diethylzinc (DEZn) and O 2 were chosen as precursor of Zn and O, respectively, and high purity Ar was used as the carrying gas for DEZn. The mol flux ratio of Zn to O was kept at 1:250. The