Analytical model of SiSiGe field-effect transistors
β Scribed by A Sadek; S.E.-D Habib; K Ismail
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 282 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0038-1101
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π SIMILAR VOLUMES
A two-dimensional analytic model is proposed for characterizing the InGaP/InGaAs/GaAs metal-insulator-semiconductor (MIS) like pseudomorphic doped-channel field-effect transistor (PDCFET). The velocity overshoot effects, associated with the low effective mass in the In 0.15 Ga 0.85 As channel, have
Field effect transistors with an organic material as active layer are at present essentially used to determine the mobilities in these materials. Until now, in analysing the measured current characteristics, only the simplest (Shockley) model has been used which accounts neither for this type of thi