Theory of organic field effect transistors

✍ Scribed by Rita Tecklenburg; Gernot Paasch; Susanne Scheinert

• Publisher: John Wiley and Sons
• Year: 1998
• Tongue: English
• Weight: 176 KB
• Volume: 8
• Category: Article
• ISSN: 1616-301X
• DOI: 10.1002/(sici)1099-0712(199811/12)8:6<285::aid-amo345>3.0.co;2-z

✦ Synopsis

Field effect transistors with an organic material as active layer are at present essentially used to determine the mobilities in these materials. Until now, in analysing the measured current characteristics, only the simplest (Shockley) model has been used which accounts neither for this type of thin film transistor (TFT), which operates in depletion and accumulation, nor for the nature of the carriers. Starting from two-dimensional simulations for the analogous silicon TFT, we have developed an analytical model for the TFT that accounts for several peculiarities of the current characteristics of this type of transistor. In addition, a first modification has been developed which describes the situation when the charged states are polarons and bipolarons, as is the case in organic materials. Applications to published experimental current characteristics show that a general reanalysis is needed.