𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Analytical formulation of nonstationary electron dynamics in submicron field effect transistors

✍ Scribed by T.A. Fjeldly

Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
497 KB
Volume
4
Category
Article
ISSN
0749-6036

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Dynamics of Threshold Voltage Shifts in
Dynamics of Threshold Voltage Shifts in Organic and Amorphous Silicon Field-Effect Transistors
✍ S. G. J. Mathijssen; M. CΓΆlle; H. Gomes; E. C. P. Smits; B. de Boer; I. McCulloc πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 133 KB πŸ‘ 2 views

Progress in environmental stability and processability, and the increase of the field-effect mobility of organic semiconductors has triggered their use as the active element in microelectronic devices. The advantages of their application are the easy processing, for example, spin-coating and ink-jet

Kinetic modelling of electron tunneling
Kinetic modelling of electron tunneling processes in quantum dots coupled to field-effect transistors
✍ F. Rana; S. Tiwari; J.J. Welser πŸ“‚ Article πŸ“… 1998 πŸ› Elsevier Science 🌐 English βš– 240 KB

Transport of electrons in semiconductor nano-structures exhibits many features that are a consequence of quantum confinement and Coulomb blockade. A quantum dot coupled to a metal-oxide-semiconductor transistor's channel region is one example of such a structure with utility as a dense semiconductor