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Modeling of field-effect transistors with laterally graded doping

✍ Scribed by M.B. Patil; S.N. Mohammad; H. Morkoç

Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
286 KB
Volume
32
Category
Article
ISSN
0038-1101

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## Abstract On the basis of RF characteristics and measured small‐signal parameters, an equivalent circuit model was formulated and characterized for metal‐semiconductor field effect transistors based on H‐terminated polycrystalline diamond. Starting from on‐wafer measurements, a bias‐dependent tra