Analytical derivation of a nonlinear FET-equivalent-circuit for MMIC applications
β Scribed by Sledzik, Hardy ;Wolff, Ingo
- Book ID
- 105035273
- Publisher
- Springer
- Year
- 1989
- Tongue
- English
- Weight
- 333 KB
- Volume
- 10
- Category
- Article
- ISSN
- 0195-9271
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π SIMILAR VOLUMES
## Abstract A new set of simply analytical equations is proposed as an alternative method to calculate the intrinsic transistor elements of an extended model for microwave FET's. This method is based on Yβparameters as well as on a new process to determine the differential resistances R~fs~ and R~f
Figure 4 Characteristic impedance and dispersion characteristics for the dominant and first two higher-order modes of shielded dielectric-loaded edge-coupled CBCPW structure with a = 4 mm, h , = h , = 1 mm, E , ~ = 2.22, and other parameters as in Figure 3 choosing appropriate loading and structura
A new statistical nonlinear model of GaAs FET MMICs which allows the representation of distance-dependent technological parameter variations by means of equivalent circuit parameters, and an automatic extraction procedure, are presented. The capability to reproduce statistical distribution has been