A new approach for the extraction of an FET equivalent circuit from measured S parameters

✍ Scribed by C. van Niekerk; P. Meyer

• Publisher: John Wiley and Sons
• Year: 1996
• Tongue: English
• Weight: 333 KB
• Volume: 11
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/(sici)1098-2760(19960405)11:5<281::aid-mop14>3.0.co;2-d

✦ Synopsis

Figure 4 Characteristic impedance and dispersion characteristics

for the dominant and first two higher-order modes of shielded dielectric-loaded edge-coupled CBCPW structure with a = 4 mm, h , = h , = 1 mm, E , ~ = 2.22, and other parameters as in Figure 3 choosing appropriate loading and structural parameters, one can optimize the behavior with respect to isolation, singlemode bandwidth, and uniformity of coupling.