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High-frequency equivalent circuit of GaAs FETs for large-signal applications

✍ Scribed by Berroth, M.; Bosch, R.


Book ID
114550860
Publisher
IEEE
Year
1991
Tongue
English
Weight
413 KB
Volume
39
Category
Article
ISSN
0018-9480

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## Abstract A new set of simply analytical equations is proposed as an alternative method to calculate the intrinsic transistor elements of an extended model for microwave FET's. This method is based on Y‐parameters as well as on a new process to determine the differential resistances R~fs~ and R~f