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A new analytical method to extract the small-signal equivalent circuit of high frequency FET transistors

✍ Scribed by J. L. Olvera Cervantes; J. L. Medina Monroy; R. A. Chávez Pérez; A. Velázquez Ventura

Publisher: John Wiley and Sons
Year: 2008
Tongue: English
Weight: 329 KB
Volume: 50
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.23130

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✦ Synopsis

Abstract

A new set of simply analytical equations is proposed as an alternative method to calculate the intrinsic transistor elements of an extended model for microwave FET's. This method is based on Y‐parameters as well as on a new process to determine the differential resistances R~fs~ and R~fd~, including the frequency effect, in such way that measurements at very low frequencies are not required and long iterative methods are avoided. The method was applied to FET's transistors and the validity of the model is certified by direct comparison with measured data from 1 to 45 GHz. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 453–457, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23130

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## Abstract A method to extract the elements of the small‐signal equivalent circuit and the noise parameters (NPs) of heterojunction bipolar transistors (HBTs) is presented. The extraction is done by simultaneous fitting of the measured __S__‐parameters, noise figure (for a well‐matched impedance),