✦ LIBER ✦

A new procedure for nonlinear statistical model extraction of GaAs FET-integrated circuits

✍ Scribed by Francesco Centurelli; Alberto Di Martino; Giuseppe Scotti; Pasquale Tommasino; Alessandro Trifiletti

Publisher: John Wiley and Sons
Year: 2003
Tongue: English
Weight: 320 KB
Volume: 13
Category: Article
ISSN: 1096-4290
DOI: 10.1002/mmce.10095

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✦ Synopsis

A new statistical nonlinear model of GaAs FET MMICs which allows the representation of distance-dependent technological parameter variations by means of equivalent circuit parameters, and an automatic extraction procedure, are presented. The capability to reproduce statistical distribution has been successfully checked on S parameters at different distances in the 1-50 GHz frequency range.

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