Analysis of the thermal behavior of AlGaN/GaN HEMTs
✍ Scribed by Salvatore Russo; Vincenzo d’Alessandro; Maurizio Costagliola; Grazia Sasso; Niccolò Rinaldi
- Book ID
- 116760374
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 994 KB
- Volume
- 177
- Category
- Article
- ISSN
- 0921-5107
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## Abstract In this article, resistive mixers using AlGaN/GaN high electron‐mobility transistor (HEMT) devices are examined. Models of the GaN devices in linear region were created. Behavior of conversion loss with LO power is well predicted using the developed model. Three down‐conversion mixers w
## Abstract High‐temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 °C in air. These high‐tempera