✦ LIBER ✦

Breakdown voltage analysis for the new RESURF AlGaN/GaN HEMTs

✍ Scribed by BaoXing Duan; YinTang Yang

Book ID: 107360046
Publisher: Science in China Press (SCP)
Year: 2012
Tongue: English
Weight: 398 KB
Volume: 55
Category: Article
ISSN: 1674-733X
DOI: 10.1007/s11432-011-4496-0

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Improvement of the Off-State Breakdown V

Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs

✍ Maojun Wang; Chen, K.J. 📂 Article 📅 2011 🏛 IEEE 🌐 English ⚖ 948 KB

Breakdown-Voltage-Enhancement Technique

Breakdown-Voltage-Enhancement Technique for RF-Based AlGaN/GaN HEMTs With a Source-Connected Air-Bridge Field Plate

✍ Gang Xie; Xu, E.; Junmin Lee; Hashemi, N.; Bo Zhang; Fu, F.Y.; Wai Tung Ng 📂 Article 📅 2012 🏛 IEEE 🌐 English ⚖ 538 KB

AlGaN/GaN HEMTs on Silicon With Hybrid S

AlGaN/GaN HEMTs on Silicon With Hybrid Schottky–Ohmic Drain for High Breakdown Voltage and Low Leakage Current

✍ Yi-Wei Lian; Yu-Syuan Lin; Hou-Cheng Lu; Yen-Chieh Huang; Hsu, S.S.H. 📂 Article 📅 2012 🏛 IEEE 🌐 English ⚖ 367 KB

Beyond the AlGaN/GaN HEMT: new concepts

Beyond the AlGaN/GaN HEMT: new concepts for high-speed transistors

✍ Palacios, Tomas 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 543 KB

## Abstract Solid state power amplifiers operating at mm‐ and sub‐mm‐wave frequencies are key components of numerous communication, sensors and defense systems. Nitride semiconductors have the potential to provide unprecedented levels of power at these frequencies. However, a multidimensional desig

High breakdown Voltage undoped AlGaN-GaN

High breakdown Voltage undoped AlGaN-GaN power HEMT on sapphire substrate and its demonstration for DC-DC converter application

✍ Saito, W.; Kuraguchi, M.; Takada, Y.; Tsuda, K.; Omura, I.; Ogura, T. 📂 Article 📅 2004 🏛 IEEE 🌐 English ⚖ 623 KB

[IEEE 2011 International Conference of E

[IEEE 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Tianjin, China (2011.11.17-2011.11.18)] 2011 IEEE International Conference of Electron Devices and Solid-State Circuits - Breakdown voltage enhancement for power AlGaN/GaN HEMTs with Air-bridge Field Plate

✍ Xie, Gang; Xu, Edward; Lee, Junmin; Hashemi, Niloufar; Fu, Fred Y.; Zhang, Bo; N 📂 Article 📅 2011 🏛 IEEE ⚖ 501 KB