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Analysis of high-frequency capacitance of amorphous silicon-crystalline silicon heterojunctions

โœ Scribed by Sharma, D. K.; Narasimhan, K. L.


Book ID
121719238
Publisher
Taylor and Francis Group
Year
1991
Tongue
English
Weight
416 KB
Volume
63
Category
Article
ISSN
1364-2812

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Properties of interfaces in amorphous/cr
โœ Olibet, Sara ;Vallat-Sauvain, Evelyne ;Fesquet, Luc ;Monachon, Christian ;Hessle ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 852 KB

## Abstract To study recombination at the amorphous/crystalline Si (aโ€Si:H/cโ€Si) heterointerface, the amphoteric nature of silicon (Si) dangling bonds is taken into account. Modeling interface recombination measured on various test structures provides insight into the microscopic passivation mechan