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High interfacial conductivity at amorphous silicon/crystalline silicon heterojunctions

✍ Scribed by J.P. Kleider; Y.M. Soro; R. Chouffot; A.S. Gudovskikh; P. Roca i Cabarrocas; J. Damon-Lacoste; D. Eon; P.-J. Ribeyron

Book ID
116670931
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
128 KB
Volume
354
Category
Article
ISSN
0022-3093

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## Abstract To study recombination at the amorphous/crystalline Si (a‐Si:H/c‐Si) heterointerface, the amphoteric nature of silicon (Si) dangling bonds is taken into account. Modeling interface recombination measured on various test structures provides insight into the microscopic passivation mechan