Properties of interfaces in amorphous/cr
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Olibet, Sara ;Vallat-Sauvain, Evelyne ;Fesquet, Luc ;Monachon, Christian ;Hessle
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Article
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2010
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John Wiley and Sons
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English
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## Abstract To study recombination at the amorphous/crystalline Si (aโSi:H/cโSi) heterointerface, the amphoteric nature of silicon (Si) dangling bonds is taken into account. Modeling interface recombination measured on various test structures provides insight into the microscopic passivation mechan