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Analysis of confinement potential fluctuation and band-gap renormalization effects on excitonic transition in GaAs/AlGaAs multiquantum wells grown on (1 0 0) and (3 1 1)A GaAs surfaces

✍ Scribed by S.A. Lourenço; M.D. Teodoro; P.P. González-Borrero; I.F.L. Dias; J.L. Duarte; E. Marega Jr.; G.J. Salamo

Book ID: 113850002
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 548 KB
Volume: 407
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2012.02.020

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Analysis of confinement potential fluctuation and band-gap renormalization effects on excitonic transition in GaAs/AlGaAs multiquantum wells grown on (1&#xa0;0&#xa0;0) and (3&#xa0;1&#xa0;1)A GaAs surfaces

Analysis of confinement potential fluctuation and band-gap renormalization effects on excitonic transition in GaAs/AlGaAs multiquantum wells grown on (1 0 0) and (3 1 1)A GaAs surfaces