Photoluminescence and secondary ion mass spectroscopy characterization of GaAs–AlGaAs quantum wells grown on GaAs (1 0 0) substrates with different surface treatments

Low temperature photoluminescence and Ra

Low temperature photoluminescence and Raman phonon modes of Au-catalyzed MBE-grown GaAs–AlGaAs core–shell nanowires grown on a pre-patterned Si (1 1 1) substrate

✍ Michelle F. Bailon-Somintac; Jasher J. Ibañez; Rafael B. Jaculbia; Regine A. Lob 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 941 KB

We present the optical properties of MBE-grown GaAs-AlGaAs core-shell nanowires (NWs) grown on anodized-aluminum-oxide (AAO) patterned-Si (1 1 1) substrate using photoluminescence and Raman scattering spectroscopy. The GaAs NWs were grown via the vapor-liquid-solid method with Au-nanoparticles as ca

Photoluminescence and secondary ion mass spectroscopy characterization of GaAs–AlGaAs quantum wells grown on GaAs (1&#xa0;0&#xa0;0) substrates with different surface treatments

Photoluminescence and secondary ion mass spectroscopy characterization of GaAs–AlGaAs quantum wells grown on GaAs (1 0 0) substrates with different surface treatments