Point defects in silicon carbide
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JΓΌrgen Schneider; Karin Maier
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Article
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1993
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Elsevier Science
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English
β 708 KB
A review is given on recent progress made in a microscopic understanding of point defects in silicon carbide (Sic). Defect structures to be discussed include shallow nitrogen donors, group-III acceptors, the transition metal impurities vanadium and titanium and radiation induced defects, like the si