Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the
Silicon Carbide (Volume 1: Growth, Defects, and Novel Applications) || Characterization of Defects in Silicon Carbide by Raman Spectroscopy
✍ Scribed by Friedrichs, Peter; Kimoto, Tsunenobu; Ley, Lothar; Pensl, Gerhard
- Book ID
- 121327978
- Publisher
- Wiley-VCH Verlag GmbH & Co. KGaA
- Year
- 2011
- Weight
- 766 KB
- Category
- Article
- ISBN
- 352740953X
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N-type silicon doped with gold and lithium was investigated by Electron Paramagnetic Resonance (EPR) and Deep Level Transient Spectroscopy (DLTS), using two sets of samples with different defect concentrations of both gold and lithium. Photoluminescence (PL) on both sets of samples allowed to correl