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An improved theoretical model of the dc characteristics of metal-semiconductor field effect transistors

✍ Scribed by P. Chattopadhyay; J. Pal


Publisher
Springer
Year
1998
Tongue
English
Weight
135 KB
Volume
67
Category
Article
ISSN
1432-0630

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We investigate experimentally the isolation edge shape effects on the short channel characteristics, i.e. the gate length dependence, of metal oxide semiconductor field effect transistors (MOSFETs) for various isolation structures, as compared with a reference MOSFET without influence of the isolati