## Abstract GaβSnβZnβO (GTZO) thin films were prepared on glass substrates at 100βΒ°C by coβsputtering of Gaβdoped ZnO and SnO~2~ targets. Characteristic properties of the films were investigated with varying oxygen gas content in the sputtering ambient. Whereas amorphous GTZO films were prepared wi
β¦ LIBER β¦
Amorphous Sn-Ga-Zn-O channel thin-film transistors
β Scribed by Ogo, Youichi ;Nomura, Kenji ;Yanagi, Hiroshi ;Kamiya, Toshio ;Hirano, Masahiro ;Hosono, Hideo
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 469 KB
- Volume
- 205
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
Sputter-deposited Ga-Sn-Zn-O thin films
β
Kim, Dong-Ho ;Kim, Hey-Ri ;Kwon, Jung-Dae ;Lee, Gun-Hwan ;Lee, Hee Sung ;Im, Seo
π
Article
π
2011
π
John Wiley and Sons
π
English
β 496 KB
Zn-In-O based thin-film transistors: Com
β
Itagaki, N. ;Iwasaki, T. ;Kumomi, H. ;Den, T. ;Nomura, K. ;Kamiya, T. ;Hosono, H
π
Article
π
2008
π
John Wiley and Sons
π
English
β 413 KB
Highly transparent solution processed In
β
Y. Wang; S. W. Liu; X. W. Sun; J. L. Zhao; G. K. L. Goh; Q. V. Vu; H. Y. Yu
π
Article
π
2010
π
Springer
π
English
β 413 KB
Transparent and conducting Zn-Sn-O thin
β
J.H. Ko; I.H. Kim; D. Kim; K.S. Lee; T.S. Lee; B. Cheong; W.M. Kim
π
Article
π
2007
π
Elsevier Science
π
English
β 965 KB
Effects of high-pressure H2O-annealing o
β
Shin, Hyun Soo ;Rim, You Seung ;Mo, Yeon-Gon ;Choi, Chaun Gi ;Kim, Hyun Jae
π
Article
π
2011
π
John Wiley and Sons
π
English
β 335 KB
## Abstract The effects of highβpressure annealing were investigated using amorphous InGaZnO (aβIGZO) thinβfilm transistors (TFTs). The fabricated device annealed at 5βatm in H~2~O ambient showed the best electrical characteristics and stability under positive bias temperature stress (PBTS). This w
A common-gate CMOS inverter with n-chann
β
Heng-Chih Lin; Wen-Jyh Sah; Si-Chen Lee
π
Article
π
1992
π
Elsevier Science
π
English
β 288 KB