Zn-In-O based thin-film transistors: Compositional dependence
β Scribed by Itagaki, N. ;Iwasaki, T. ;Kumomi, H. ;Den, T. ;Nomura, K. ;Kamiya, T. ;Hosono, H.
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 413 KB
- Volume
- 205
- Category
- Article
- ISSN
- 0031-8965
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## Abstract GaβSnβZnβO (GTZO) thin films were prepared on glass substrates at 100βΒ°C by coβsputtering of Gaβdoped ZnO and SnO~2~ targets. Characteristic properties of the films were investigated with varying oxygen gas content in the sputtering ambient. Whereas amorphous GTZO films were prepared wi
UV-vis (acetonitrile) : k max (e) = 239 nm (85), 301 nm (28). 1 H NMR and 13 C NMR spectra in CDCl 3 . The mass spectrum and FTIR spectrum are same as those reported previously from our group [16a]. Detailed experimental methods and characterization data are available in the Supporting Information