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Amorphous semiconductor—electrolyte junction. Energetics at the a-WO3—electrolyte junction

✍ Scribed by F. Di Quarto; V.O. Aimiuwu; S. Piazza; C. Sunseri


Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
629 KB
Volume
36
Category
Article
ISSN
0013-4686

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✦ Synopsis


In order to elucidate the influence of thickness and amorphous structure on the kinetics of electron exchange with redox couples in solution, a critical reexamination of the energetica at thk amorphous anodic WO, films (a-WO&-electrolyte junction has been performed, based on a recent theory of amorphous semiconductor (a-SC) Schottky barrier. The admittance study of the barrier performed in a large interval of electrode potential at changing frequency and flhn thickness allowed the determination of the energy levels as well as the distribution of localized electronic states within the mobility gap of the Chns. The new energetic picture derived is able to explain some features of the kinetics of electron exchange with an Fti+13+ redox couple in 0.5 M H*SO, solution previously reported. Key woruk amorphous semiconductors, oxide films, admittance, redox reactions.


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