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Amorphous semiconductor-electrolyte junction. Interference effects on the photocharacteristics of the a-Nb2O5-electrolyte junction

✍ Scribed by F.Di Quarto; S. Piazza; R. D'Agostino; C. Sunseri

Publisher: Elsevier Science
Year: 1989
Tongue: English
Weight: 687 KB
Volume: 34
Category: Article
ISSN: 0013-4686
DOI: 10.1016/0013-4686(89)87006-9

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✦ Synopsis

A quantitative study of the dependence of the photocurrent on both the film thickness and the potential drop inside the oxide has been carried out for the N&O, anodic films-electrolyte interface. The experimental results give clear indication of interference effects on the collected photocurrent under illumination with light having energy higher than the optical band gap of the films. The fitting of the photocurrent us thickness curves, performed in a large range of film thickness on the basis of an internretative model oreviouslv suagested, allows estimation of the mobility times lifetime product of the photbgenerated holes in anodic NbiO, films.

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