Amorphous semiconductor—electrolyte junction. Impedance study on the a-Nb2 O5—electrolyte junction

✍ Scribed by F. Di Quarto; S. Piazza; C. Sunseri

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 975 KB
• Volume: 35
• Category: Article
• ISSN: 0013-4686
• DOI: 10.1016/0013-4686(90)85045-o

✦ Synopsis

A systemattc study of the Impedance behavtour of the anodrc mobmm oxtde film/aqueous electrolyte Interface was carned out usmg the lock-m techmque at different stgnal frequencres The dependence of both components of the Impedance on the electrode potentral and on frequency IS analysed by takmg mto account the amorphous nature of the films The lack of long-range order m these oxide layers modtfies the physrcal ptcture m respect to the case of smgle crystal semtconductors A new equivalent crrcutt has been assumed, based on recent theory of an amorphous semtconductor Schottky barrier Such a new approach allows the charactertzatton of the interface and the determmatton of the electromc states dtstrtbutron wrthm the oxrde gap Possible mistakes arlsmg from the use of models vahd for crystalhne semtconductors to study these kmds of Interfaces are pomted out The effect of anneahng of the films under argon atmosphere as well as the possrble nature of the defects m Nb,O, anodtc films are dtscussed '.

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