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Modelling of the impedance behaviour of an amorphous semiconductor schottky barrier in high depletion conditions. Application to the study of the titanium anodic oxide/electrolyte junction

✍ Scribed by Carlos da Fonseca; Mário Guerreiro Ferreira; Manuel da Cunha Belo


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
543 KB
Volume
39
Category
Article
ISSN
0013-4686

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