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AlInP–AlGaInP Quantum-Well Lasers Grown by Molecular Beam Epitaxy

✍ Scribed by Tukiainen, A.; Toikkanen, L.; Haavisto, M.; Erojarvi, V.; Rimpilainen, V.; Viheriala, J.; Pessa, M.

Book ID: 119803200
Publisher: IEEE
Year: 2006
Tongue: English
Weight: 142 KB
Volume: 18
Category: Article
ISSN: 1041-1135
DOI: 10.1109/lpt.2006.884730

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## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to cri