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GaInP and AlInP grown by elemental source molecular beam epitaxy

✍ Scribed by J. A. Varriano; M. W. Koch; F. G. Johnson; G. W. Wicks


Book ID
112815148
Publisher
Springer US
Year
1992
Tongue
English
Weight
384 KB
Volume
21
Category
Article
ISSN
0361-5235

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We report on the InAs quantum dot lasers grown by gas source molecular-beam epitaxy, respectively, on GaAs and InP substrates. Room temperature continuous-wave operation was achieved for both InAs/GaAs and InAs/InP quantum dot lasers, respectively, at 1:10 mm and 1:5421:70 mm wavelength region. More