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Group III nitride–arsenide long wavelength lasers grown by elemental source molecular beam epitaxy

✍ Scribed by C. W. Coldren; S. G. Spruytte; J. S. Harris; M. C. Larson

Book ID
121663580
Publisher
AVS (American Vacuum Society)
Year
2000
Tongue
English
Weight
314 KB
Volume
18
Category
Article
ISSN
0734-211X

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## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to cri