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GaInNAsSb for 1.3-1.6-μm-long wavelength lasers grown by molecular beam epitaxy

✍ Scribed by Gambin, V.; Wonill Ha; Wistey, M.; Homan Yuen; Bank, S.R.; Kim, S.M.; Harris, J.S., Jr.

Book ID
114569553
Publisher
IEEE
Year
2002
Tongue
English
Weight
236 KB
Volume
8
Category
Article
ISSN
1077-260X

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Long-wavelength strained-layer InGaAs/Ga
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✍ T. Piwoński; P. Sajewicz; J. M. Kubica; M. Zbroszczyk; K. Regiński; B. Mroziewic 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 117 KB

## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to cri