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AlGaN/GaN Heterostructure Field-Effect Transistors with Current Gain Cut-off Frequency of 152 GHz on Sapphire Substrates

✍ Scribed by Higashiwaki, Masataka; Matsui, Toshiaki

Book ID: 124099745
Publisher: Institute of Pure and Applied Physics
Year: 2005
Tongue: English
Weight: 137 KB
Volume: 44
Category: Article
ISSN: 0021-4922
DOI: 10.1143/JJAP.44.L475

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