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DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates

✍ Scribed by Ping, A.T.; Chen, Q.; Yang, J.W.; Khan, M.A.; Adesida, I.

Book ID: 121410202
Publisher: IEEE
Year: 1998
Tongue: English
Weight: 92 KB
Volume: 19
Category: Article
ISSN: 0741-3106
DOI: 10.1109/55.658603

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